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| KSC2751 KSC2751 High Speed High Current Switching Industrial Use TO-3P NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature 1 1.Base 2.Collector 3.Emitter Value 500 400 7 15 30 7.5 120 150 - 55 ~ 150 Units V V V A A A W C C * PW300s, Duty Cycle10% Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO (sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Curren Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 10A, IB1= 2A, L = 50H IC = 10A, IB1= -IB2 = 2A TC =125C, l = 180H, Clamped IC = 20A, IB1 = 4A, -IB2 = 2A TC= 125C, L = 180H,Clamped VCB = 400V, IE = 0 VCE = 400V, RBE = 50 @ TC = 125C VCE = 400V, VBE(off) = -1.5V VCE = 400V, VBE(off) = -1.5V @ TC = 125 VEB = 5V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A VCE = 5V, IC = 10A IC = 10A, IB = 2A IC = 10A, IB = 2A VCC = 150V, IC = 10A IB1 = -IB2 = 2A RL = 15 15 10 7 35 Min 400 450 400 100 2 100 1 10 80 Typ Max Units V V V A mA A mA A * Collector-Emitter Saturation Voltage * Base Emitter ON Voltage Turn ON Time Storage Time Fall Time 0.3 1 1 1.5 1 2.5 0.7 V V s s s * Pulse Test: PW350s, Duty Cycle2% Pulsed hFE Classificntion Classification hFE1 (c)2000 Fairchild Semiconductor International N 15 ~ 30 R 20 ~ 40 O 30 ~ 60 Y 40 ~ 80 Rev. A, February 2000 KSC2751 Typical Characteristics 20 18 1000 IC[A], COLLECTOR CURRENT 16 14 12 10 8 6 hFE, DC CURRENT GAIN IB = 2.0A IB = 1.8A IB = 1.6A IB = 1.4A IB = 1.2A IB = 1.0A IB = 0.8A IB = 0.6A IB = 0.4A IB = 0.2A VCE = 5V Pulsed 100 10 4 2 0 0 1 2 3 4 5 1 0.01 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 100 IC = 5 IB IC = 5 IB1 = -5 IB2 Pulsed, VCC = 150V 1 tON, tSTG, tF [s], TIME V BE(sat) 10 tSTG 0.1 1 VCE (sat) tF tON 0.01 0.01 0.1 1 10 100 0.1 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 100 20 IC(Pulse) MAX. PW IC[A], COLLECTOR CURRENT 10 Dis sip Lim ation ited 1 IC[A], COLLECTOR CURRENT 10 0 =1 us 0u s 1m VCEO(sus) MAX. VCEO(sus) 0 0 100 200 300 400 0.1 0.01 1 10 100 1000 VCEX(sus) 500 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area s m d 10 ite Lim DC S/b s 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Reverse Bias Safe Operating Area (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2751 Typical Characteristics (Continued) 160 160 140 140 120 PC[W], POWER DISSIPATION 125 150 175 120 dT[%], IC DERATING 100 100 80 80 S/b 60 Di ss Lim ited ipa 60 tio n 40 Lim ite 40 d 20 20 0 0 25 50 o 0 75 100 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Area Figure 8. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2751 Package Demensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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